2009-01-01
Year 2009
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S. Parthiban, V. Gokulakrishnan, K. Ramamurthi, E. Elangovan, R. Martins, E. Fortunato, R. Ganesan, “High near-infrared transparent molybdenum-doped indium oxide thin films for nanocrystalline silicon solar cell applications”. Solar Energy Materials & Solar Cells Vol 93 (2009) pp. 92-97.
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JZ Wang, R. Martins, NP Barradas, E. Alves, T. Monteiro, M. Peres, E. Elamurugu and E. Fortunato, “Intrinsic p Type ZnO Films Deposited by rf Magnetron Sputtering”. J. of Nanoscience and Nanotechnology, Vol. 9 (2) (2009) pp. 813-816.
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E. Elangovan, G. Gonçalves, R. Martins, E. Fortunato, “RF sputtered wide work function indium molybdenum oxide thin films for solar cell applications”. Solar Energy Materials and Solar Cells, 83 (2009) pp 726-731.
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R. Martins, L. Pereira, P. Barquinha, I. Ferreira, N. Correia, E. Fortunato. Self-sustained n-Type Memory Transistor Devices Based on Natural Cellulose Paper Fibers, Journal of Information Display, 10 (4), 80-89 (2009)
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E. Alves, N. Franco, N.P. Barradas, F. Munnik, T. Monteiro, M. Peres, J. Wang, R. Martins, E. Fortunato “Structural and optical properties of nitrogen doped ZnO films”. Vacuum, 83, (10), (2009), pp. 1274-1278.
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S.A. E. Filonovich, H. Águas, I. Bernacka-Wojcik, C. Gaspar, M. Vilarigues, L.B. Silva, E. Fortunato, R. Martins. “Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure”. Vacuum, 83, (10) (2009) pp. 1253-1256.
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S. Parthiban, K. Ramamurthi, E. Elangovan, R. Martins, E. Fortunato, “Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility”. Appl. Physics Letters, 94 (21) (2009), pp. 212101.
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S. Parthiban, E. Elangovan, K. Ramamurthi R. Martins, E. Fortunato, “High near-infrared transparency and carrier mobility of Mo doped In2O3 thin films for optoelectronics applications”. J. Appl. Physics, 106 (6) (2009), pp. 063716.
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Gabriel Bernardo, Gonçalo Gonçalves, Pedro Barquinha, Quirina Ferreira, Graça Brotas, Luís Pereira, Ana Charas, Jorge Morgado, Rodrigo Martins, Elvira. “Polymer light-emitting diodes with amorphous indium-zinc oxide anodes deposited at room temperature”. Synthetic Metals, 159 (11) (2009) pp 1112-1115 (2009).
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ZL Pei, L. Pereira, G. Gonçalves, P. Barquinha, N. Franco, E. Alves, AM Rego, R. Martins, E. Fortunato, “Room-Temperature Cosputtered HfO2-Al2O3 Multicomponent Gate Dielectrics” Electrochemical and solid-state letters, 12 (10) (2009) pp. G65-G68.
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ME Lopes, HL Gomes, MCR Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, I. Ferreira, “Gate-bias stress in amorphous oxide semiconductors thin-film transistors” Applied Physics Letters, 95 (6) (2009) pp. 063502-063504.
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E. Elangovan, R. Martins, E. Fortunato. “Indium molybdenum oxide thin films: A comparative study by two different RF sputtering systems”. Phisyca Status Solidi a, 206 (9) (2009), pp. 2123-2127.
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V. Figueiredo, E. Elangovan, G. Goncalves, N. Franco, E. Alves E, SHK Park, R. Martins, E. Fortunato. “Electrical, structural and optical characterization of copper oxide thin films as a function of post annealing temperature”. Phisyca Status Solidi a, 206 (9) (2009), pp. 2143-2148.
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L. Pereira, P. Barquinha, G. Goncalves, A. Vila A, A. Olziersky, J. Morante, E. Fortunato, R. Martins. “Sputtered multicomponent amorphous dielectrics for transparent electronics”. Phisyca Status Solidi a, 206 (9) (2009), pp. 2149-2154.
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P. Barquinha, L. Pereira, G. Goncalves, Martins, D. Kuscer, M. Kosec, R. Martins, E. Fortunato. “Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics”. Journal of Electrochemical Society, 156 (11) (2009), pp. H824-H831.
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R. Martins, L. Raniero, L. Pereira, D. Costa, H. Águas, S. Pereira, L. Silva, A. Gonçalves, I. Ferreira, E. Fortunato. “Nanostructured silicon and its application to solar cells, position sensors and thin film transistors”. Philosophical Magazine, 89 (28) (2009), pp. 2699- 2721
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E. Fortunato, L. Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. Gonçalves, A. Gonçalves, R. Martins. “Oxide Semiconductors: order within the disorder”. Philosophical Magazine, 89 (28) (2009), pp. 2741 – 2758
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E. Fortunato, A. Gonçalves, A. Pimentel, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, R. Martins. “Zinc oxide, a multifunctional material: from material to device applications”. Applied Physics A, 96 (1) (2009), pp. 197-205.
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R. Martins, A. Madan. “From materials science to applications of amorphous, microcrystalline and nanocrystalline silicon and other semiconductors. Preface”. Philosophical Magazine, 89 (28) (2009), pp. 2431-.2434.
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R. Martins, P. Barquinha, L. Pereira, N. Correia, G. Gonçalves, I. Ferreira, and E. Fortunato. “Selective floating gate non-volatile paper memory transistor”. Phys. Status Solidi RRL 3 (9) (2009), pp. 308–310.
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S.M. Rozati, S. Moradi, S. Golshahi, R. Martins, E. Fortunato, “Electrical, structural and optical properties of fluorine-doped zinc oxide thin films: Effect of the solution aging time”. Thin Solid Films, 518 (4) (2009) pp. 1279-1282.
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S. Golshahi, S.M. Rozati, R. Martins, E. Fortunato, “P-type ZnO thin film deposited by spray pyrolysis technique: The effect of solution concentration”. Thin Solid Films, 518 (4) (2009) pp. 1149-1152.
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G. Goncalves, P. Barquinha, L. Pereira, N. Franco, E. Alves, R. Martins, E. Fortunato. “High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs”. Electrochemical and Solid State Letters, 13 (1) (2009), pp. 1120-1122.
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E. Fortunato, N. Correia, P. Barquinha, C. Costa, L. Pereira, G. Goncalves, R. Martins, “Paper Field Effect Transistor”, Proceedings of SPIE Vol. 7217 (2009) Article Number: 72170K.
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R. Martins, L. Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. Goncalves, A. Goncalves, E. Fortunato, “Zinc oxide and related compounds: order within the disorder” Proceedings of SPIE Vol. 7217 (2009), Article Number: 72170B.