Publicações 2009

2009-01-01

Ano 2009

S. Parthiban, V. Gokulakrishnan, K. Ramamurthi, E. Elangovan, R. Martins, E. Fortunato, R. Ganesan, “High near-infrared transparent molybdenum-doped indium oxide thin films for nanocrystalline silicon solar cell applications”. Solar Energy Materials & Solar Cells Vol 93 (2009) pp. 92-97.
JZ Wang, R. Martins, NP Barradas, E. Alves, T. Monteiro, M. Peres, E. Elamurugu and E. Fortunato, “Intrinsic p Type ZnO Films Deposited by rf Magnetron Sputtering”. J. of Nanoscience and Nanotechnology, Vol. 9 (2) (2009) pp. 813-816.
E. Elangovan, G. Gonçalves, R. Martins, E. Fortunato, “RF sputtered wide work function indium molybdenum oxide thin films for solar cell applications”. Solar Energy Materials and Solar Cells, 83 (2009) pp 726-731.
R. Martins, L. Pereira, P. Barquinha, I. Ferreira, N. Correia, E. Fortunato. Self-sustained n-Type Memory Transistor Devices Based on Natural Cellulose Paper Fibers, Journal of Information Display, 10 (4), 80-89 (2009)
E. Alves, N. Franco, N.P. Barradas, F. Munnik, T. Monteiro, M. Peres, J. Wang, R. Martins, E. Fortunato “Structural and optical properties of nitrogen doped ZnO films”. Vacuum, 83, (10), (2009), pp. 1274-1278.
S.A. E. Filonovich, H. Águas, I. Bernacka-Wojcik, C. Gaspar, M. Vilarigues, L.B. Silva, E. Fortunato, R. Martins. “Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure”. Vacuum, 83, (10) (2009) pp. 1253-1256.
S. Parthiban, K. Ramamurthi, E. Elangovan, R. Martins, E. Fortunato, “Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility”. Appl. Physics Letters, 94 (21) (2009), pp. 212101.
S. Parthiban, E. Elangovan, K. Ramamurthi R. Martins, E. Fortunato, “High near-infrared transparency and carrier mobility of Mo doped In2O3 thin films for optoelectronics applications”. J. Appl. Physics, 106 (6) (2009), pp. 063716.
Gabriel Bernardo, Gonçalo Gonçalves, Pedro Barquinha, Quirina Ferreira, Graça Brotas, Luís Pereira, Ana Charas, Jorge Morgado, Rodrigo Martins, Elvira. “Polymer light-emitting diodes with amorphous indium-zinc oxide anodes deposited at room temperature”. Synthetic Metals, 159 (11) (2009) pp 1112-1115 (2009).
ZL Pei, L. Pereira, G. Gonçalves, P. Barquinha, N. Franco, E. Alves, AM Rego, R. Martins, E. Fortunato, “Room-Temperature Cosputtered HfO2-Al2O3 Multicomponent Gate Dielectrics” Electrochemical and solid-state letters, 12 (10) (2009) pp. G65-G68.
ME Lopes, HL Gomes, MCR Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, I. Ferreira, “Gate-bias stress in amorphous oxide semiconductors thin-film transistors” Applied Physics Letters, 95 (6) (2009) pp. 063502-063504.
E. Elangovan, R. Martins, E. Fortunato. “Indium molybdenum oxide thin films: A comparative study by two different RF sputtering systems”. Phisyca Status Solidi a, 206 (9) (2009), pp. 2123-2127.
V. Figueiredo, E. Elangovan, G. Goncalves, N. Franco, E. Alves E, SHK Park, R. Martins, E. Fortunato. “Electrical, structural and optical characterization of copper oxide thin films as a function of post annealing temperature”. Phisyca Status Solidi a, 206 (9) (2009), pp. 2143-2148.
L. Pereira, P. Barquinha, G. Goncalves, A. Vila A, A. Olziersky, J. Morante, E. Fortunato, R. Martins. “Sputtered multicomponent amorphous dielectrics for transparent electronics”. Phisyca Status Solidi a, 206 (9) (2009), pp. 2149-2154.
P. Barquinha, L. Pereira, G. Goncalves, Martins, D. Kuscer, M. Kosec, R. Martins, E. Fortunato. “Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics”. Journal of Electrochemical Society, 156 (11) (2009), pp. H824-H831.
R. Martins, L. Raniero, L. Pereira, D. Costa, H. Águas, S. Pereira, L. Silva, A. Gonçalves, I. Ferreira, E. Fortunato. “Nanostructured silicon and its application to solar cells, position sensors and thin film transistors”. Philosophical Magazine, 89 (28) (2009), pp. 2699- 2721
E. Fortunato, L. Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. Gonçalves, A. Gonçalves, R. Martins. “Oxide Semiconductors: order within the disorder”. Philosophical Magazine, 89 (28) (2009), pp. 2741 – 2758
E. Fortunato, A. Gonçalves, A. Pimentel, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, R. Martins. “Zinc oxide, a multifunctional material: from material to device applications”. Applied Physics A, 96 (1) (2009), pp. 197-205.
R. Martins, A. Madan. “From materials science to applications of amorphous, microcrystalline and nanocrystalline silicon and other semiconductors. Preface”. Philosophical Magazine, 89 (28) (2009), pp. 2431-.2434.
R. Martins, P. Barquinha, L. Pereira, N. Correia, G. Gonçalves, I. Ferreira, and E. Fortunato. “Selective floating gate non-volatile paper memory transistor”. Phys. Status Solidi RRL 3 (9) (2009), pp. 308–310.
S.M. Rozati, S. Moradi, S. Golshahi, R. Martins, E. Fortunato, “Electrical, structural and optical properties of fluorine-doped zinc oxide thin films: Effect of the solution aging time”. Thin Solid Films, 518 (4) (2009) pp. 1279-1282.
S. Golshahi, S.M. Rozati, R. Martins, E. Fortunato, “P-type ZnO thin film deposited by spray pyrolysis technique: The effect of solution concentration”. Thin Solid Films, 518 (4) (2009) pp. 1149-1152.
G. Goncalves, P. Barquinha, L. Pereira, N. Franco, E. Alves, R. Martins, E. Fortunato. “High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs”. Electrochemical and Solid State Letters, 13 (1) (2009), pp. 1120-1122.
E. Fortunato, N. Correia, P. Barquinha, C. Costa, L. Pereira, G. Goncalves, R. Martins, “Paper Field Effect Transistor”, Proceedings of SPIE Vol. 7217 (2009) Article Number: 72170K.
R. Martins, L. Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. Goncalves, A. Goncalves, E. Fortunato, “Zinc oxide and related compounds: order within the disorder” Proceedings of SPIE Vol. 7217 (2009), Article Number: 72170B.

Ano 2009

S. Parthiban, V. Gokulakrishnan, K. Ramamurthi, E. Elangovan, R. Martins, E. Fortunato, R. Ganesan, “High near-infrared transparent molybdenum-doped indium oxide thin films for nanocrystalline silicon solar cell applications”. Solar Energy Materials & Solar Cells Vol 93 (2009) pp. 92-97.

JZ Wang, R. Martins, NP Barradas, E. Alves, T. Monteiro, M. Peres, E. Elamurugu and E. Fortunato, “Intrinsic p Type ZnO Films Deposited by rf Magnetron Sputtering”. J. of Nanoscience and Nanotechnology, Vol. 9 (2) (2009) pp. 813-816.

E. Elangovan, G. Gonçalves, R. Martins, E. Fortunato, “RF sputtered wide work function indium molybdenum oxide thin films for solar cell applications”. Solar Energy Materials and Solar Cells, 83 (2009) pp 726-731.

R. Martins, L. Pereira, P. Barquinha, I. Ferreira, N. Correia, E. Fortunato. Self-sustained n-Type Memory Transistor Devices Based on Natural Cellulose Paper Fibers, Journal of Information Display, 10 (4), 80-89 (2009)

E. Alves, N. Franco, N.P. Barradas, F. Munnik, T. Monteiro, M. Peres, J. Wang, R. Martins, E. Fortunato “Structural and optical properties of nitrogen doped ZnO films”. Vacuum, 83, (10), (2009), pp. 1274-1278.

S.A. E. Filonovich, H. Águas, I. Bernacka-Wojcik, C. Gaspar, M. Vilarigues, L.B. Silva, E. Fortunato, R. Martins. “Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure”. Vacuum, 83, (10) (2009) pp. 1253-1256.

S. Parthiban, K. Ramamurthi, E. Elangovan, R. Martins, E. Fortunato, “Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility”. Appl. Physics Letters, 94 (21) (2009), pp. 212101.

S. Parthiban, E. Elangovan, K. Ramamurthi R. Martins, E. Fortunato, “High near-infrared transparency and carrier mobility of Mo doped In2O3 thin films for optoelectronics applications”. J. Appl. Physics, 106 (6) (2009), pp. 063716.

ZL Pei, L. Pereira, G. Gonçalves, P. Barquinha, N. Franco, E. Alves, AM Rego, R. Martins, E. Fortunato, “Room-Temperature Cosputtered HfO2-Al2O3 Multicomponent Gate Dielectrics” Electrochemical and solid-state letters, 12 (10) (2009) pp. G65-G68.

ME Lopes, HL Gomes, MCR Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, I. Ferreira, “Gate-bias stress in amorphous oxide semiconductors thin-film transistors” Applied Physics Letters, 95 (6) (2009) pp. 063502-063504.

E. Elangovan, R. Martins, E. Fortunato. “Indium molybdenum oxide thin films: A comparative study by two different RF sputtering systems”. Phisyca Status Solidi a, 206 (9) (2009), pp. 2123-2127.

V. Figueiredo, E. Elangovan, G. Goncalves, N. Franco, E. Alves E, SHK Park, R. Martins, E. Fortunato. “Electrical, structural and optical characterization of copper oxide thin films as a function of post annealing temperature”. Phisyca Status Solidi a, 206 (9) (2009), pp. 2143-2148.

L. Pereira, P. Barquinha, G. Goncalves, A. Vila A, A. Olziersky, J. Morante, E. Fortunato, R. Martins. “Sputtered multicomponent amorphous dielectrics for transparent electronics”. Phisyca Status Solidi a, 206 (9) (2009), pp. 2149-2154.

P. Barquinha, L. Pereira, G. Goncalves, Martins, D. Kuscer, M. Kosec, R. Martins, E. Fortunato. “Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics”. Journal of Electrochemical Society, 156 (11) (2009), pp. H824-H831.

R. Martins, L. Raniero, L. Pereira, D. Costa, H. Águas, S. Pereira, L. Silva, A. Gonçalves, I. Ferreira, E. Fortunato. “Nanostructured silicon and its application to solar cells, position sensors and thin film transistors”. Philosophical Magazine, 89 (28) (2009), pp. 2699- 2721

E. Fortunato, L. Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. Gonçalves, A. Gonçalves, R. Martins. “Oxide Semiconductors: order within the disorder”. Philosophical Magazine, 89 (28) (2009), pp. 2741 – 2758

E. Fortunato, A. Gonçalves, A. Pimentel, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, R. Martins. “Zinc oxide, a multifunctional material: from material to device applications”. Applied Physics A, 96 (1) (2009), pp. 197-205.

R. Martins, A. Madan. “From materials science to applications of amorphous, microcrystalline and nanocrystalline silicon and other semiconductors. Preface”. Philosophical Magazine, 89 (28) (2009), pp. 2431-.2434.

R. Martins, P. Barquinha, L. Pereira, N. Correia, G. Gonçalves, I. Ferreira, and E. Fortunato. “Selective floating gate non-volatile paper memory transistor”. Phys. Status Solidi RRL 3 (9) (2009), pp. 308–310.

S.M. Rozati, S. Moradi, S. Golshahi, R. Martins, E. Fortunato, “Electrical, structural and optical properties of fluorine-doped zinc oxide thin films: Effect of the solution aging time”. Thin Solid Films, 518 (4) (2009) pp. 1279-1282.

S. Golshahi, S.M. Rozati, R. Martins, E. Fortunato, “P-type ZnO thin film deposited by spray pyrolysis technique: The effect of solution concentration”. Thin Solid Films, 518 (4) (2009) pp. 1149-1152.

G. Goncalves, P. Barquinha, L. Pereira, N. Franco, E. Alves, R. Martins, E. Fortunato. “High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs”. Electrochemical and Solid State Letters, 13 (1) (2009), pp. 1120-1122.

E. Fortunato, N. Correia, P. Barquinha, C. Costa, L. Pereira, G. Goncalves, R. Martins, “Paper Field Effect Transistor”, Proceedings of SPIE Vol. 7217 (2009) Article Number: 72170K.

R. Martins, L. Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. Goncalves, A. Goncalves, E. Fortunato, “Zinc oxide and related compounds: order within the disorder” Proceedings of SPIE Vol. 7217 (2009), Article Number: 72170B.