Papers published 2001

2001-01-01
Year 2001
  1. H. Águas, R. Martins, E Fortunato. “Role of ion bombardment on the properties of a-Si:H films”. Vacuum, 60 (2001) pp. 247-254. 67/110.
  2. R. Martins, I. Ferreira, A. Cabrita, H. Águas, V. Silva, E. Fortunato. “New steps to improve the a-Si:H device stability by design of the interfaces”. Advanced Engineering Materials, Vol.3, nº3 (2001) pp. 170-173.
  3. R. Martins, P. Teodoro, F. Soares, I. Ferreira, N. Guimarães, E. Fortunato, J. Borges, G. José, A. Groth, L. Schultze, D. Berndt, F. Reichel and F. Stam. “Application of amorphous silicon thin film position sensitive detector to optical rulers”. Advanced Engineering Materials, Vol 3 nº3 (2001) pp. 174-177.
  4. R. Martins, H. Águas, I. Ferreira, V. Silva, A. Cabrita, E. Fortunato. “Role of ion bombardment and plasma impedance on the performances presented by undoped a-Si:H films”. Thin Solid Films, 383, (2001) pp. 165-168.
  5. I. Baía, B. Fernandes, P. Nunes, M. Quintela, R. Martins. “Influence of the process parameters on structural and electrical properties of r.f. magnetron sputtering ITO films”. Thin Solid Films, 383 (2001) pp.244-247.
  6. P. Nunes, E. Fortunato, R. Martins. “Influence of the post treatment on the properties of ZnO thin films”. Thin Solid Films, 383 (2001) pp 277-280.
  7. H. Águas, Y. Nunes, E. Fortunato, P. Gordo, M. Maneira, R. Martins. “Correlation between a-Si:H surface oxidation process and the performances of MIS structures”. Thin Solid Films, 383 (2001) pp. 185-188.
  8. E. Fortunato, D. Brida, I. Ferreira, H. Águas, P. Nunes, R. Martins. “Production and characterization of large area flexible thin film position sensitive detectors”. Thin Solid Films, 383 (2001) pp. 310-313.
  9. H. Águas, A. Marques, R. Martins, E. Fortunato. “Fast and Cheap Method to Qualitatively Measure the Thickness and Uniformity of ZrO2 Thin Films”. Mat. Science Semic. Proc. 4 (2001) pp. 319-321.
  10. R. Martins, H. Águas, A. Cabrita, P. Tonello, V. Silva, I. Ferreira, E. Fortunato and L. Guimarães. “New nanostructured silicon films grown by PECVD technique under controlled powder formation conditions”. Solar Energy, 69, nº1-6 (2001) pp.263-269.
  11. R. Martins, H. Águas, I. Ferreira, E. Fortunato and L. Guimarães. “Towards the improvement of the stability of a-Si:H pin devices”. Solar Energy, 69, nº 1-6 (2001), pp. 257-262.
  12. I. Ferreira, F. Braz Fernandes, P. Vilarinho, E. Fortunato, and R. Martins. “Nanocrystalline p-type silicon films produced by hot wire plasma assisted technique”. Materials Science & Engineering C, 15 (2001) pp. 137-140.
  13. I. Ferreira, R. Martins, A. Cabrita, E. Fortunato, P. Vilarinho. “Role of the gas pressure and hydrogen dilution on the properties of large area nanocrystalline p-type silicon films produced by hot wire plasma assisted technique”. Materials Science & Engineering C, 15 (2001) pp. 141-144.
  14. Hugo Águas, R. Martins, Yuri Nunes, M. Maneira and E. Fortunato. “Influence of the Plasma Regime on the Structural, Optical, Electrical and Morphological Properties of a-Si:H Thin Films”. Materials Science Forum, 382 (2001) pp. 11-20.
  15. R. Martins, H. Águas, V. Silva, I. Ferreira, A. Cabrita and E. Fortunato. “Silicon Films produced by PECVD under powder formation conditions”. Materials Science Forum, 382 (2001) pp. 21-28.
  16. P. Nunes, E. Fortunato, R. Martins. “Influence of the annealing conditions on the properties of ZnO thin films”. Int. J. of Inorganic Materials, 3 (2001) pp. 1125-1128.
  17. P. Nunes, E. Fortunato, A. Lopes, R. Martins. “Influence of the deposition conditions on the gas sensitivity of zinc oxide thin films deposited by spray pyrolysis”. Int. J. of Inorganic Materials, 3 (2001) pp. 1129-1131.
  18. P. Nunes, E. Fortunato, P. Vilarinho, R. Martins. “Effect of different dopants on the properties of ZnO thin films”. Int. J. of Inorganic Materials, 3 (2001) pp. 1211-1213.
  19. A. Lopes, E. Fortunato, P. Nunes, P. Vilarinho, R. Martins. “Correlation between the microscopic and macroscopic characteristics of SnO2 thin film gas sensors”. Int. J. of Inorganic Materials, 3 (2001) pp. 1349-1351.
  20. I. Ferreira, M.E.V. Costa, L. Pereira, E. Fortunato, R. Martins, A.R. Ramos, M.F. Silva. “Silicon carbide alloys produced by hot wire, hot wire plasma assisted and plasma enhanced CVD techniques”. Applied Surface Science, 184, 1-4 (2001) pp. 8-19.
  21. I. Ferreira, V. Silva, H. Águas, E. Fortunato, R. Martins. “Mass spectroscopy diagnostic during the deposition of a-Si:C:H and a-C:H films produced by hot wire plasma assisted techniques”. Applied Surface Science, 184, 1-4 (2001) pp. 60-65. 68/110.
  22. R. Martins, V. Silva, H. Águas, A. Cabrita, I. Ferreira, E. Fortunato. “Correlation between the carbon content and hydrogen contents with the gas species and the plasma impedance of silicon carbide films produced by PECVD technique”. Applied Surface Science, 184, 1-4 (2001) pp. 101-106.
  23. A. Cabrita, L. Pereira, D. Brida, A. Lopes, A. Marques, I. Ferreira, E. Fortunato and R. Martins. “Silicon carbide photodiodes: Schottky and pinip structures”. Applied Surface Science, 184, 1-4 (2001) pp.437-442.
  24. A. Cabrita, J. Figueiredo, L. Pereira, H. Águas, V. Silva, D. Brida, I. Ferreira, E. Fortunato, R. Martins. "Thin film position sensitive detectors based on pin amorphous silicon carbide structures”. Applied Surface Science, 184, 1-4 (2001) pp. 443-447.
  25. P. Nunes, E. Fortunato, A. Vilarinho, R. Martins, “Properties presented by tin oxide thin films deposited by spray pyrolysis”, Polycrystalline semiconductors IV Materials, Technologies and large area electronics, Book Series: Solid State Phenomena, Vol. 80-81 (2001), pp. 139-143.
  26. P. Nunes, E. Fortunato, A. Vilarinho, R. Martins, “Effect of deposition conditions upon gas sensitivity of zinc oxide thin films deposited by spray pyrolysis”, Polycrystalline semiconductors IV Materials, Technologies and large area electronics, Book Series: Solid State Phenomena, Vol. 80-81 (2001), pp. 151-154.
  27. I. Ferreira, R. Martins, A. Cabrita; FB Fernandes, E. Fortunato, “Large-area polycrystalline p-type silicon films produced by the hot wire technique”, Polycrystalline semiconductors IV Materials, Technologies and large area electronics, Book Series: Sol. St. Phenomena, Vol 80-81 (2001), pp. 47-52.