Publicações 2010

2010-01-01

Ano 2010

H. Águas, SA Filanovitch, I. Bernacka-Wojcik, E. Fortunato, R. Martins “Role of Trimethylboron to Silane Ratio on the Properties of p-Type Nanocrystalline Silicon Thin Film Deposited by Radio Frequency Plasma Enhanced Chemical Vapour Deposition”. J. of Nanoscience and Nanotechnology, Vol. 10 (4) (2010) pp. 2547-2551.
J.Z. Wang, E. Elamurugu, N. Franco, E. Alves, AMB Rego, G. Gonçalves, R. Martins, E. Fortunato, “Influence of Deposition Pressure on N-doped ZnO Films by RF Magnetron Sputtering”. J. of Nanoscience and Nanotechnology, Vol. 9 (4) (2010) pp. 2674-2678.
L. Pereira, H. Águas, L. Gomes, P. Barquinha, E. Fortunato, R. Martins, “Nanostructured Silicon Based Thin Film Transistors Processed in the Plasma Dark Region”. J. of Nanoscience and Nanotechnology, Vol. 9 (4) (2010) pp. 2938-2943.
Iwona Bernacka-Wojcik, Rohan Senadeera, Pawel Jerzy Wojcik, Leonardo Bione Silva, Gonçalo Doriac, Pedro Baptista, Hugo Águas, Elvira Fortunato, Rodrigo Martins. “Inkjet printed and “doctor blade” TiO2 photodetectors for DNA biosensors”. Biosensors and Bioelectronics 25 (2010) pp. 1229–1234.
E. Fortunato, V. Figueiredo, P. Barquinha, E. Elamurugu, R. Barros, G. Goncalves, SHK Park, CS Hwang, R. Martins. “Thin-film transistors based on p-type Cu2O thin films produced at room temperature”. Applied Phys. Lett. 96 (19) (2010) p. 192102.
S Shane O'Brien, Mark G. Nolan, Mehmet Çopuroglu, Jeff A. Hamilton, Ian Povey, Luis Pereira, Rodrigo Martins, Elvira Fortunato, Martyn Pemble, , “Zinc Oxide Thin films: Characterization and Potential Applications”. Thin Solid Films, 518, (1) (2010), pp. 4515-4519.
E. Fortunato, R. Barros, P. Barquinha, V. Figueiredo, SHK Park, CS Hwang, R. Martins. “Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing”. Applied Phys. Lett. 97 (5) (2010) p. 052105.
Javier Contreras, Daniel Costa, Sonia Pereira, Elvira Fortunato, Rodrigo Martins, Rafal Wierzbicki, Holger Heerlein and Isabel Ferreira, “Micro Cantilever Movement Detection with an Amorphous Silicon Array of Position Sensitive Detectors”. Sensors, 10 (9) (2010), pp. 8173-8184.
I. Ferreira, B. Bras, N. Correia, P. Barquinha, E. Fortunato, R. Martins, “Self-Rechargeable Paper Thin-Film Batteries: Performance and Applications”. Journal of Display Technology, 6 (8) (2010), pp. 332-335.
Pedro Barquinha, Luis Pereira, Gonçalo Gonçalves, Danjela Kuscer, Marija Kosec, Anna Vilà, Antonis Olziersky, Juan Ramon Morante, Rodrigo Martins, Elvira Fortunato “Low-temperature sputtered mixtures of high-κ and high bandgap dielectrics for GIZO TFTs”. Journal of the SID 18 (10) (2010), pp. 762-772.
Antonis Olziersky Olziersky, Pedro Barquinha, Anna Vilà, Luís Pereira, Gonçalo Gonçalves, Elvira Fortunato, Rodrigo Martins, and Juan R. Morante. “Insight on the SU-8 resist as passivation layer for transparent Ga2O3–In2O3–ZnO thin-film transistors”. Journal of Applied Physics, 108, (2010), pp. 064505-1 to 064505-7.
PK Nayak PK, T. Busani, E. Elamurugu, P. Barquinha, R. Martins, Y. Hong, E. Fortunato. “Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric”. Applied Physics Letters, 97 (18), (2010), pp. 183504.
M. Lorenz, A. Lajn, H. Frenzel, H. v. Wenckstern, M. Grundmann, P. Barquinha, R. Martins, and E. Fortunato. “Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films”. Applied Physics Letters, 97 (24), (2010), pp. 243506.
JZ Wang, E. Elangovan, N. Franco, A. Alves, A. Rego, R. Martins, E. Fortunato. “Influence of oxygen partial pressure on properties of N-doped ZnO films deposited by magnetron sputtering”. Transactions of Nonferrous Metals Society of China, 20 (12) (2010) pp. 2326-2330.
R. Martins, L. Pereira, P. Barquinha, N. Correia, G. Goncalves, I. Ferreira, C. Dias, E. Fortunato, “Floating gate memory paper transístor”, Proceedings of SPIE Vol. 7603 (2010), Article Number: 760314.

Ano 2010

J.Z. Wang, E. Elamurugu, N. Franco, E. Alves, AMB Rego, G. Gonçalves, R. Martins, E. Fortunato, “Influence of Deposition Pressure on N-doped ZnO Films by RF Magnetron Sputtering”. J. of Nanoscience and Nanotechnology, Vol. 9 (4) (2010) pp. 2674-2678.

L. Pereira, H. Águas, L. Gomes, P. Barquinha, E. Fortunato, R. Martins, “Nanostructured Silicon Based Thin Film Transistors Processed in the Plasma Dark Region”. J. of Nanoscience and Nanotechnology, Vol. 9 (4) (2010) pp. 2938-2943.

E. Fortunato, V. Figueiredo, P. Barquinha, E. Elamurugu, R. Barros, G. Goncalves, SHK Park, CS Hwang, R. Martins. “Thin-film transistors based on p-type Cu2O thin films produced at room temperature”. Applied Phys. Lett. 96 (19) (2010) p. 192102.

S Shane O'Brien, Mark G. Nolan, Mehmet Çopuroglu, Jeff A. Hamilton, Ian Povey, Luis Pereira, Rodrigo Martins, Elvira Fortunato, Martyn Pemble, , “Zinc Oxide Thin films: Characterization and Potential Applications”. Thin Solid Films, 518, (1) (2010), pp. 4515-4519.

E. Fortunato, R. Barros, P. Barquinha, V. Figueiredo, SHK Park, CS Hwang, R. Martins. “Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing”. Applied Phys. Lett. 97 (5) (2010) p. 052105.

Javier Contreras, Daniel Costa, Sonia Pereira, Elvira Fortunato, Rodrigo Martins, Rafal Wierzbicki, Holger Heerlein and Isabel Ferreira, “Micro Cantilever Movement Detection with an Amorphous Silicon Array of Position Sensitive Detectors”. Sensors, 10 (9) (2010), pp. 8173-8184.

I. Ferreira, B. Bras, N. Correia, P. Barquinha, E. Fortunato, R. Martins, “Self-Rechargeable Paper Thin-Film Batteries: Performance and Applications”. Journal of Display Technology, 6 (8) (2010), pp. 332-335.

PK Nayak PK, T. Busani, E. Elamurugu, P. Barquinha, R. Martins, Y. Hong, E. Fortunato. “Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric”. Applied Physics Letters, 97 (18), (2010), pp. 183504.

M. Lorenz, A. Lajn, H. Frenzel, H. v. Wenckstern, M. Grundmann, P. Barquinha, R. Martins, and E. Fortunato. “Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films”. Applied Physics Letters, 97 (24), (2010), pp. 243506.

JZ Wang, E. Elangovan, N. Franco, A. Alves, A. Rego, R. Martins, E. Fortunato. “Influence of oxygen partial pressure on properties of N-doped ZnO films deposited by magnetron sputtering”. Transactions of Nonferrous Metals Society of China, 20 (12) (2010) pp. 2326-2330.

R. Martins, L. Pereira, P. Barquinha, N. Correia, G. Goncalves, I. Ferreira, C. Dias, E. Fortunato, “Floating gate memory paper transístor”, Proceedings of SPIE Vol. 7603 (2010), Article Number: 760314.