Papers published 2004

2004-01-01

Year 2004

E. Fortunato, A. Gonçalves, A. Marques, A. Viana, H. Águas, L. Pereira, I. Ferreira, P. Vilarinho, R. Martins. “New developments in galium doped zinc oxide deposited on polymeric substrates by rf magnetron sputtering”. Surface and Coatings Technology, 180-181(2004) pp. 20-25.
E. Fortunato, V. Assunção, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, R. Martins. “High quality conductive gallium doped zinc oxide films deposited at room temperature”. Thin Solid Films, 451-452 (2004) 443-447.
H. Águas, L. Raniero, L. Pereira, E. Fortunato, R. Martins. “Effect of discharge frequency on the properties and growth rate of polymorphous silicon”. Thin Solid Films, 451-452 (2004) 264-268.
L. Pereira, H. Águas, R.M. Martins, F.B. Fernandes, E. Fortunato, R. Martins. “Polycrystalline silicon obtained by metal induced crystallization using different metals”. Thin Solid Films, 451-452 (2004) 334-339.
H. Águas, A. Goullet, L. Pereira, E. Fortunato, R. Martins. “Effect of tunnelling oxide films thickness and density on the performance of MIS photodiodes”. Thin Solid Films, 451-452 (2004) 361-365.
I. Ferreira, E. Fortunato, R. Martins. “Properties of Si:H nanocrystalline undoped and doped films produced by HWPA-CVD technique”. Thin Solid Films, 451-452 (2004) 366-369.
H. Cui, V. Teixeira, A. Monteiro, E. Fortunato, R. Martins, E. Bertran. “Physical properties of sputtered ITO and WO3 thin films”. Materials Science Forum, 455-456 (2004) pp. 7-11.
E. Fortunato, V. Assunção, A. Marques, A. Gonçalves, H. Águas, L. Pereira, I. Ferreira, F. Fernandes, R. J. Silva, R. Martins. “ZnO:Ga thin films produced by rf sputtering at room temperature: effect of the power density”. Materials Science Forum, 455-456 (2004) pp. 12-15.
L. Pereira, H. Águas, R. Igreja, R. Miguel Martins, N. Nedev. L. Raneiro, E. Fortunato, R. Martins. “Sputtering preparation of silicon nitride thin films for applications as gate dielectric”. Materials Science Forum, 455-456 (2004) pp. 69-72.
H. Águas, L. Pereira, L. Raniero, E. Fortunato, R. Martins. “MIS Photodiodes of pm-Si deposited at high growth rates by 27.12 MHz PECVD discharge”. Mat. Science Forum, 455-456 (2004) pp. 73-76.
S. Zhang, Y. Xu, X. Liao, R. Martins, E. Fortunato, X. Zeng, Z. Hu, G. Kong. “Characterization of polymorphous silicon thin films and solar cells”. Materials Science Forum, 455-456 (2004) pp. 77-80.
M. Fernandes, M. Vieira, R. Martins, “Dynamic characterization of large area image sensing structures based on A-SI:C”. Materials Science Forum, 455-456 (2004) pp. 86-90.
H. Águas, L. Pereira, I. Ferreira, A.R. Ramos, A.S. Viana, J. Andreu, P. Vilarinho, E. Fortunato, R. Martins. “Effect of annealing on Gold rectifying contacts in amorphous silicon”. Materials Science Forum, 455-456 (2004) pp. 96-99.
R. Martins, H. Águas, I. Ferreira, E. Fortunato, L. Raniero, P. Cabarrocas “Composition, structure and optical characteristics pm-Si films deposited by PECVD at 27.12 MHz”. Materials Science Forum, 455-456 (2004) pp. 100-103.
L. Raniero, H. Águas, L. Pereira, E. Fortunato, I. Ferreira, R. Martins. “Batch Processing Method to Deposit a-Si:H Films by PECVD”. Materials Science Forum, 455-456 (2004) pp. 104-107.
N. Nedev, G. Beshkov, E. Fortunato, S. S. Georgiev, T. Ivanov, L. Raniero, S. Zhang, R. Martins, “Influence of the rapid thermal annealing on the properties of thin a-Si films”. Materials Science Forum, 455-456 (2004) pp. 108-111.
L. Pereira, H. Águas, L. Raniero, R. M. S. Martins, E. Fortunato, R. Martins, “Role of Substrate on the growth process of polycrystalline silicon thin films by low-pressure chemical vapour deposition”. Materials Science Forum, 455-456 (2004) pp. 112-115.
A. Silva, L. Raniero, E. Ferreira, H. Águas, L. Pereira, E. Fortunato, R. Martins, “Silicon etching in CF4/O2 and SF6 atmospheres”. Materials Science Forum, 455-456 (2004) pp. 120-123.
S. Mei, J. Yang, J.M. Ferreira, R. Martins, “Aqueous Tape Casting of Low-k Cordierite Substrate: The influence of glass Content”. Materials Science Forum, 455-456 (2004) pp. 168-171.
L. Raniero, R. Martins, H. Águas, S. Zang, I. Ferreira, L. Pereira, E. Fortunato and L. Boufendi, “Growth of Polymorphous Silicon films Deposited by PECVD at 13.56 MHz”. Materials Science Forum, 455-456 (2004) pp. 532-535.
I. Ferreira, E. Fortunato, R. Martins, “Ethanol Vapour detector based in porous a-Si:H films produced by HW-CVD technique”. Sensors and Actuators B, 100, issue 1-2 (2004) pp. 236-239.
L. Raniero, L. Pereira, S. Zang, I. Ferreira, H. Águas, E. Fortunato, R. Martins, “Characterization of the density os states of polymorphous silicon films produced at 13.56 MHz and 27.12 MHz using CPM and SCL techniques”. J. Non-Crist. Solids, 338-340 (2004) pp. 206-210.
L. Pereira, H. Águas, R. Miguel Martins, E. Fortunato, R. Martins, “Polycrystalline silicon obtained by gold metal induced crystallization”. J. Non-Crist. Solids, 338-340 (2004) pp. 178-182.
H. Águas, L. Raniero, L. Pereira, A.F. Viana, E. Fortunato, R. Martins. “Role of the rf frequency on the structure and composition of polymorphous silicon”. J. Non-Crist. Solids, 338-340 (2004) pp. 183-187.
S. Zhang, L. Raniero, E. Fortunato, L. Pereira, N. Martins, P. Canhola, I. Ferreira, N. Nedev, H. Águas, R. Martins, “The characterization of silicon carbide thin films prepared by VHF PECVD technology”. J. Non-Crist. Solids, 338-340 (2004) pp. 530-533.
S. Zhang, X. Liao, Y. Xu, R. Martins, E. Fortunato, G. Kong. “The diphasic nc-Si/a-Si:H thin film with improved medium-range order”. J. Non-Crist. Solids, 338-340 (2004) pp. 188-191.
E. Fortunato, A. Pimentel, L. Pereira, A. Gonçalves, G. Lavareda, H. Águas, I. Ferreira, C.N. Carvalho, R. Martins. “High field effect mobility zinc oxide thin film transistors produced at room temperature”. J. Non-Crist. Solids, 338-340 (2004) pp. 806-809.
H. Águas, L. Pereira, I. Ferreira, A.R. Ramos, A.S. Viana, J. Andreu, P. Vilarinho, E. Fortunato, R. Martins, E. Fortunato. “Effect of an interfatial oxide layer in the annealing behaviour of Au/a-Si:H MIS photodiodes”. J. Non-Crist. Solids, 338-340 (2004) pp. 810-813.
L. Pereira, A. Marques, H. Águas, N. Nedev, S. Giorgiev, R. Igreja, E. Fortunato, R. Martins. “Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric applications”. Materials Science and Engineering B-Solid, 1-3 (2004) pp. 89-93.
H. Águas, L. Pereira, RJC Silva, E. Fortunato, R. Martins. “Effect of the tunneling oxide growth by H2O2 on the performance of MIS photodiodes”. Materials Science and Engineering B-Solid, 1-3 (2004) pp. 256-259.
R. Martins, E. Fortunato, P. Nunes, I. Ferreira, A. Marques, M. Bender, N. Katsarakis, V. Cimalla, and G. Kiriakidis. “Zinc Oxide as Ozone Sensor”, J. Appl. Phys., 96, 3 (2004) pp. 1398-1408.
M. Fernandes, M. Vieira, I. Rodrigues, R. Martins. “Large area image sensing structures based on a-SiC: a dynamic characterization”. Sensors and Actuators A, 113, (3) (2004), pp. 360-364.
M. Fernandes, M. Vieira R. Martins. “Novel Structure for Large Area Image Sensing”. Sensors and Actuators A, 15, (2-3) (2004) pp. 357-361.
E. Fortunato, L. Pereira, H. Águas, I. Ferreira, R. Martins. “Flexible position sensitive photodetectors based on a-Si:H heterostrucutres”. Sensors and Actuators A: Physical, 116, 1 (2004), pp. 119-124.
I. Ferreira, R. Igreja, E. Fortunato, R. Martins. “Porous a/anc-Si:H films produced by HW-CVD as ethanol detector and primary fuell cell”. Sensors and Actuators B, 103, 1-2 (2004), pp. 344-349.
I. Ferreira, E. Fortunato, R. Martins, “Ethanol vapour detector based in porous a-Si: H films produced by HW-CVD technique”. Sensors and Actuators B, 100, 1-2 (2004), pp. 236-239.
E. Fortunato, P. Barquinha, A. Pimentel, A. Gonçalves, A. Marques, R. Martins and L. Pereira. “Wide band gap high mobility ZnO thin film transistors produced at room temperature”. Applied Physics Letters, 85,13 (2004) pp. 2541-2543.
Hermann Grimmeiss, Rodrigo Martins, José Martinez Duart. “Excellence in European Universities”. Materials Today, December 2004, pp. 56-60.
L. Raniero, N. Martins, P. Canhola, S. Pereira, I. Ferreira, E. Fortunato, R. Martins. “Spectral response of large area amorphous silicon solar cells”. Journal of High Temperature Materials Process (An international Quarterly of High Technology Plasma Processes), Vol. 8, issue 2 (2004), pp. 293-300.
P. Barquinha, L. Pereira, H. Águas, E. Fortunato, R. Martins. “Influence of the deposition conditions on the properties of titanium oxide produced by rf magnetron sputtering”. Mat. Science and Semic. Processing, Vol. 7, issue 4-6 (2004), pp. 243-247.
E. Fortunato, A. Goncalves, CN de Carvalho, A. Pimentel, G. Lavareda, A. Marques, R. Martins, “Enhancement of the electrical properties of ITO deposited on polymeric substrates by using a ZnO buffer layer”, Materials Research Society Symp. Proceedings Vol. 814 (2004), pp. 231-236.
E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, L. Pereira, A. Marques, R. Martins, “Next generation of thin film transistors based on zinc oxide”, Materials Research Society Symposium Proceedings Vol. 811 (2004), pp. 347-352.
E. Fortunato, A. Pimentel, A. Goncalves, A. Marques, R. Martins, “High mobility nanocrystalline indium zinc oxide deposited at room temperature”, Materials Research Society Symposium Proceedings Vol. 811 (2004), pp. 437-442.

Year 2004

E. Fortunato, A. Gonçalves, A. Marques, A. Viana, H. Águas, L. Pereira, I. Ferreira, P. Vilarinho, R. Martins. “New developments in galium doped zinc oxide deposited on polymeric substrates by rf magnetron sputtering”. Surface and Coatings Technology, 180-181(2004) pp. 20-25.

E. Fortunato, V. Assunção, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, R. Martins. “High quality conductive gallium doped zinc oxide films deposited at room temperature”. Thin Solid Films, 451-452 (2004) 443-447.

H. Águas, L. Raniero, L. Pereira, E. Fortunato, R. Martins. “Effect of discharge frequency on the properties and growth rate of polymorphous silicon”. Thin Solid Films, 451-452 (2004) 264-268.

L. Pereira, H. Águas, R.M. Martins, F.B. Fernandes, E. Fortunato, R. Martins. “Polycrystalline silicon obtained by metal induced crystallization using different metals”. Thin Solid Films, 451-452 (2004) 334-339.

H. Águas, A. Goullet, L. Pereira, E. Fortunato, R. Martins. “Effect of tunnelling oxide films thickness and density on the performance of MIS photodiodes”. Thin Solid Films, 451-452 (2004) 361-365.

I. Ferreira, E. Fortunato, R. Martins. “Properties of Si:H nanocrystalline undoped and doped films produced by HWPA-CVD technique”. Thin Solid Films, 451-452 (2004) 366-369.

H. Cui, V. Teixeira, A. Monteiro, E. Fortunato, R. Martins, E. Bertran. “Physical properties of sputtered ITO and WO3 thin films”. Materials Science Forum, 455-456 (2004) pp. 7-11.

E. Fortunato, V. Assunção, A. Marques, A. Gonçalves, H. Águas, L. Pereira, I. Ferreira, F. Fernandes, R. J. Silva, R. Martins. “ZnO:Ga thin films produced by rf sputtering at room temperature: effect of the power density”. Materials Science Forum, 455-456 (2004) pp. 12-15.

L. Pereira, H. Águas, R. Igreja, R. Miguel Martins, N. Nedev. L. Raneiro, E. Fortunato, R. Martins. “Sputtering preparation of silicon nitride thin films for applications as gate dielectric”. Materials Science Forum, 455-456 (2004) pp. 69-72.

H. Águas, L. Pereira, L. Raniero, E. Fortunato, R. Martins. “MIS Photodiodes of pm-Si deposited at high growth rates by 27.12 MHz PECVD discharge”. Mat. Science Forum, 455-456 (2004) pp. 73-76.

S. Zhang, Y. Xu, X. Liao, R. Martins, E. Fortunato, X. Zeng, Z. Hu, G. Kong. “Characterization of polymorphous silicon thin films and solar cells”. Materials Science Forum, 455-456 (2004) pp. 77-80.

M. Fernandes, M. Vieira, R. Martins, “Dynamic characterization of large area image sensing structures based on A-SI:C”. Materials Science Forum, 455-456 (2004) pp. 86-90.

H. Águas, L. Pereira, I. Ferreira, A.R. Ramos, A.S. Viana, J. Andreu, P. Vilarinho, E. Fortunato, R. Martins. “Effect of annealing on Gold rectifying contacts in amorphous silicon”. Materials Science Forum, 455-456 (2004) pp. 96-99.

R. Martins, H. Águas, I. Ferreira, E. Fortunato, L. Raniero, P. Cabarrocas “Composition, structure and optical characteristics pm-Si films deposited by PECVD at 27.12 MHz”. Materials Science Forum, 455-456 (2004) pp. 100-103.

L. Raniero, H. Águas, L. Pereira, E. Fortunato, I. Ferreira, R. Martins. “Batch Processing Method to Deposit a-Si:H Films by PECVD”. Materials Science Forum, 455-456 (2004) pp. 104-107.

N. Nedev, G. Beshkov, E. Fortunato, S. S. Georgiev, T. Ivanov, L. Raniero, S. Zhang, R. Martins, “Influence of the rapid thermal annealing on the properties of thin a-Si films”. Materials Science Forum, 455-456 (2004) pp. 108-111.

L. Pereira, H. Águas, L. Raniero, R. M. S. Martins, E. Fortunato, R. Martins, “Role of Substrate on the growth process of polycrystalline silicon thin films by low-pressure chemical vapour deposition”. Materials Science Forum, 455-456 (2004) pp. 112-115.

A. Silva, L. Raniero, E. Ferreira, H. Águas, L. Pereira, E. Fortunato, R. Martins, “Silicon etching in CF4/O2 and SF6 atmospheres”. Materials Science Forum, 455-456 (2004) pp. 120-123.

S. Mei, J. Yang, J.M. Ferreira, R. Martins, “Aqueous Tape Casting of Low-k Cordierite Substrate: The influence of glass Content”. Materials Science Forum, 455-456 (2004) pp. 168-171.

L. Raniero, R. Martins, H. Águas, S. Zang, I. Ferreira, L. Pereira, E. Fortunato and L. Boufendi, “Growth of Polymorphous Silicon films Deposited by PECVD at 13.56 MHz”. Materials Science Forum, 455-456 (2004) pp. 532-535.

I. Ferreira, E. Fortunato, R. Martins, “Ethanol Vapour detector based in porous a-Si:H films produced by HW-CVD technique”. Sensors and Actuators B, 100, issue 1-2 (2004) pp. 236-239.

L. Raniero, L. Pereira, S. Zang, I. Ferreira, H. Águas, E. Fortunato, R. Martins, “Characterization of the density os states of polymorphous silicon films produced at 13.56 MHz and 27.12 MHz using CPM and SCL techniques”. J. Non-Crist. Solids, 338-340 (2004) pp. 206-210.

L. Pereira, H. Águas, R. Miguel Martins, E. Fortunato, R. Martins, “Polycrystalline silicon obtained by gold metal induced crystallization”. J. Non-Crist. Solids, 338-340 (2004) pp. 178-182.

H. Águas, L. Raniero, L. Pereira, A.F. Viana, E. Fortunato, R. Martins. “Role of the rf frequency on the structure and composition of polymorphous silicon”. J. Non-Crist. Solids, 338-340 (2004) pp. 183-187.

S. Zhang, L. Raniero, E. Fortunato, L. Pereira, N. Martins, P. Canhola, I. Ferreira, N. Nedev, H. Águas, R. Martins, “The characterization of silicon carbide thin films prepared by VHF PECVD technology”. J. Non-Crist. Solids, 338-340 (2004) pp. 530-533.

S. Zhang, X. Liao, Y. Xu, R. Martins, E. Fortunato, G. Kong. “The diphasic nc-Si/a-Si:H thin film with improved medium-range order”. J. Non-Crist. Solids, 338-340 (2004) pp. 188-191.

E. Fortunato, A. Pimentel, L. Pereira, A. Gonçalves, G. Lavareda, H. Águas, I. Ferreira, C.N. Carvalho, R. Martins. “High field effect mobility zinc oxide thin film transistors produced at room temperature”. J. Non-Crist. Solids, 338-340 (2004) pp. 806-809.

H. Águas, L. Pereira, I. Ferreira, A.R. Ramos, A.S. Viana, J. Andreu, P. Vilarinho, E. Fortunato, R. Martins, E. Fortunato. “Effect of an interfatial oxide layer in the annealing behaviour of Au/a-Si:H MIS photodiodes”. J. Non-Crist. Solids, 338-340 (2004) pp. 810-813.

L. Pereira, A. Marques, H. Águas, N. Nedev, S. Giorgiev, R. Igreja, E. Fortunato, R. Martins. “Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric applications”. Materials Science and Engineering B-Solid, 1-3 (2004) pp. 89-93.

H. Águas, L. Pereira, RJC Silva, E. Fortunato, R. Martins. “Effect of the tunneling oxide growth by H2O2 on the performance of MIS photodiodes”. Materials Science and Engineering B-Solid, 1-3 (2004) pp. 256-259.

R. Martins, E. Fortunato, P. Nunes, I. Ferreira, A. Marques, M. Bender, N. Katsarakis, V. Cimalla, and G. Kiriakidis. “Zinc Oxide as Ozone Sensor”, J. Appl. Phys., 96, 3 (2004) pp. 1398-1408.

M. Fernandes, M. Vieira, I. Rodrigues, R. Martins. “Large area image sensing structures based on a-SiC: a dynamic characterization”. Sensors and Actuators A, 113, (3) (2004), pp. 360-364.

M. Fernandes, M. Vieira R. Martins. “Novel Structure for Large Area Image Sensing”. Sensors and Actuators A, 15, (2-3) (2004) pp. 357-361.

E. Fortunato, L. Pereira, H. Águas, I. Ferreira, R. Martins. “Flexible position sensitive photodetectors based on a-Si:H heterostrucutres”. Sensors and Actuators A: Physical, 116, 1 (2004), pp. 119-124.

I. Ferreira, R. Igreja, E. Fortunato, R. Martins. “Porous a/anc-Si:H films produced by HW-CVD as ethanol detector and primary fuell cell”. Sensors and Actuators B, 103, 1-2 (2004), pp. 344-349.

I. Ferreira, E. Fortunato, R. Martins, “Ethanol vapour detector based in porous a-Si: H films produced by HW-CVD technique”. Sensors and Actuators B, 100, 1-2 (2004), pp. 236-239.

E. Fortunato, P. Barquinha, A. Pimentel, A. Gonçalves, A. Marques, R. Martins and L. Pereira. “Wide band gap high mobility ZnO thin film transistors produced at room temperature”. Applied Physics Letters, 85,13 (2004) pp. 2541-2543.

Hermann Grimmeiss, Rodrigo Martins, José Martinez Duart. “Excellence in European Universities”. Materials Today, December 2004, pp. 56-60.

P. Barquinha, L. Pereira, H. Águas, E. Fortunato, R. Martins. “Influence of the deposition conditions on the properties of titanium oxide produced by rf magnetron sputtering”. Mat. Science and Semic. Processing, Vol. 7, issue 4-6 (2004), pp. 243-247.

E. Fortunato, A. Goncalves, CN de Carvalho, A. Pimentel, G. Lavareda, A. Marques, R. Martins, “Enhancement of the electrical properties of ITO deposited on polymeric substrates by using a ZnO buffer layer”, Materials Research Society Symp. Proceedings Vol. 814 (2004), pp. 231-236.

E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, L. Pereira, A. Marques, R. Martins, “Next generation of thin film transistors based on zinc oxide”, Materials Research Society Symposium Proceedings Vol. 811 (2004), pp. 347-352.

E. Fortunato, A. Pimentel, A. Goncalves, A. Marques, R. Martins, “High mobility nanocrystalline indium zinc oxide deposited at room temperature”, Materials Research Society Symposium Proceedings Vol. 811 (2004), pp. 437-442.